Performance prediction of SOI FinFETs in the presence of random discrete dopants

Abstract

The position dependent discrete dopants (in the source/drain region of the channel) play a vital role in determining the performance of SOI FinFETs. In this work, the impact of random discrete dopants in SOI FinFETs has been investigated using a predictive simulation tool. A three-dimensional drift diffusion and density gradient approximation is employed for studying the device parameter variation due to discrete random dopant location and number fluctuations, a dominant source of statistical variability in nanoscale MOSFETs. The effects of random discrete dopants on Ion, Ioff, subthreshold slope (SS), and threshold voltage have been investigated.