Effects of low-temperature water vapor annealing of strained SiGe surface-channel pMOSFETs with high-/spl kappa/ dielectric

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Pub Date : 2003-09-16 DOI:10.1109/ESSDERC.2003.1256929

J. Westlinder, G. Sjoblom, D. Wu, P. Hellstrom, J. Olsson, S. Zhang, M. Ostling

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Abstract

A significant reduction of negative oxide charges is observed in strained SiGe channel pMOSFETs, utilizing ALD high-k-gate dielectrics, after low temperature water vapor annealing. The negative charges may originate from non-bridging oxygen bonds in the dielectrics, which are passivated after the water vapor annealing. However, the subthreshold slope is not changed with the 300/spl deg/C annealing, which indicates that interface states are not affected.

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低温水蒸气退火对高/spl kappa/介电介质应变SiGe表面沟道pmosfet的影响

在低温水蒸气退火后，使用ALD高k栅极介质的应变SiGe沟道pmosfet中观察到负氧化物电荷的显著减少。负电荷可能来自介电体中的非桥接氧键，这些氧键在水蒸气退火后被钝化。300/spl℃退火后，亚阈值斜率没有发生变化，表明界面状态没有受到影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.

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