Circuit-simulation model of gate-drain-capacitance changes in small-size MOSFETs due to high channel-field gradients

Abstract

The field gradient along the MOSFET channel is included in the modeling of the gate-drain capacitance (C/sub gd/) by an induced capacitance approach. The new approach has been successfully implemented in surface-potential based model HiSIM (Hiroshima-university STARC IGFET Model) and is capable of reproducing measured effects, which are particularly significant for pocket-implant technology, accurately.