A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit

Abstract

The development of high voltage SiC power MOSFET has made the fast switching of high voltage possible. The high dv/dt caused by fast high voltage switching induces the difficulty of mal-operation of power MOSFET with the self turn-on phenomenon by the fluctuation of gate voltage. This phenomenon is recognized as intra EMC. This paper studies the mechanism of self turn-on phenomenon and discusses the suppression method.