Energy-efficient Annealing Process of HfO2-based Ferroelectric Capacitor using UV-LED for Green Manufacturing

Abstract

Crystallization of ferroelectric $\text{Hf}_{0.5}\text{Zr}_{0.5}\mathrm{O}_{2}$ (HZO) capacitors with TiN electrodes is demonstrated using ultraviolet (UV)-LED annealing process, for the first time. The ferroelectric characteristics obtained by this method are comparable to those achieved by conventional infrared (IR)-RTA process at 400°C ~ 450°C. Since the absorptance of the ferroelectric films is highest in UV region, the UV-LED annealing process is promising to achieve much higher energy-efficient annealing process than the conventional IR-RTA method for green manufacturing.