Electron ballistic current enhancement of Ge1−xSnx FinFETs

Abstract

The indirect-direct transition of Ge1-xSnx at Sn content 6.5% is simulated by nonlocal empirical pseudopotential method. The non-parabolicity band of Γ valley is considered for confined mass, density of state, and conductivity mass for the electron ballistic current calculation of Ge1-xSnx FinFETs. The integration of alloying Sn content and applying external stress enhances the ballistic current due to carriers transferring from indirect L valleys with small injection velocity to direct Γ valley and other indirect L valleys with high injection velocity.