{"title":"Design challenges for high-performance SOI digital CMOS VLSI","authors":"C. Chuang","doi":"10.1109/VTSA.1999.786052","DOIUrl":null,"url":null,"abstract":"This paper reviews the recent advances of SOI for high-performance digital CMOS VLSI applications. The technology/device requirements and design issues/challenges for high-performance, general-purpose microprocessor applications are differentiated with respect to low-power portable applications. Particular emphasis is placed on the impact of floating-body in partially-depleted devices on the circuit operation, stability, and functionality. Unique SOI design aspects such as the parasitic bipolar effect and hysteretic V/sub T/ variation are addressed. Circuit techniques to improve the noise immunity and global design issues are discussed.","PeriodicalId":237214,"journal":{"name":"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.1999.786052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper reviews the recent advances of SOI for high-performance digital CMOS VLSI applications. The technology/device requirements and design issues/challenges for high-performance, general-purpose microprocessor applications are differentiated with respect to low-power portable applications. Particular emphasis is placed on the impact of floating-body in partially-depleted devices on the circuit operation, stability, and functionality. Unique SOI design aspects such as the parasitic bipolar effect and hysteretic V/sub T/ variation are addressed. Circuit techniques to improve the noise immunity and global design issues are discussed.