High transfer fidelity via nanoimprint lithography of patterns for bioelectronics applications

P. Güell‐Grau, M. Asbahi, S. Smout, M. Willegems, B. K. Kotowska, M. Traub, S. Lenci, E. Storace, S. Severi
{"title":"High transfer fidelity via nanoimprint lithography of patterns for bioelectronics applications","authors":"P. Güell‐Grau, M. Asbahi, S. Smout, M. Willegems, B. K. Kotowska, M. Traub, S. Lenci, E. Storace, S. Severi","doi":"10.1117/12.2657991","DOIUrl":null,"url":null,"abstract":"Precise control on nanoscale pattern manufacturing is key to enable new-generation devices in numerous fields, such as bioelectronics or optics, among others. However, to meet the requirements of the industry, it is especially relevant to increase throughput and reduce processing costs. In this regard, Nano-Imprint Lithography (NIL) is an ideal candidate for manufacturing large volumes of devices with low cost-of-ownership, by replicating small features from high-quality masters. However, NIL faces some challenges, such as limited pattern transfer fidelity in large-area processing. Here, we show our NIL processing capabilities, in terms of both yield and transfer fidelity from original DUV manufactured masters, including features from few hundred to tens of nanometers. We present an exhaustive study on the pattern evolution through the complete process, including design, master fabrication, NIL and subsequent pattern transfer via etching. This study demonstrates the inclusion of NIL into our foundry-mature, CMOS-compatible process modules as well as the pattern evolution characterization that enable technology-aware modelling and designing.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2657991","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Precise control on nanoscale pattern manufacturing is key to enable new-generation devices in numerous fields, such as bioelectronics or optics, among others. However, to meet the requirements of the industry, it is especially relevant to increase throughput and reduce processing costs. In this regard, Nano-Imprint Lithography (NIL) is an ideal candidate for manufacturing large volumes of devices with low cost-of-ownership, by replicating small features from high-quality masters. However, NIL faces some challenges, such as limited pattern transfer fidelity in large-area processing. Here, we show our NIL processing capabilities, in terms of both yield and transfer fidelity from original DUV manufactured masters, including features from few hundred to tens of nanometers. We present an exhaustive study on the pattern evolution through the complete process, including design, master fabrication, NIL and subsequent pattern transfer via etching. This study demonstrates the inclusion of NIL into our foundry-mature, CMOS-compatible process modules as well as the pattern evolution characterization that enable technology-aware modelling and designing.
高传递保真度通过纳米压印光刻模式的生物电子应用
精确控制纳米尺度的图案制造是在许多领域,如生物电子学或光学等,实现新一代器件的关键。然而,为了满足行业的要求,提高吞吐量和降低加工成本尤为重要。在这方面,纳米压印光刻(NIL)是制造大量低成本设备的理想选择,通过复制高质量大师的小特征。然而,在大面积的图像处理中,零值识别面临着模式转移保真度有限的挑战。在这里,我们展示了我们的NIL处理能力,从原始DUV制造的母片的良率和转移保真度方面,包括几百到几十纳米的特征。我们在整个过程中对图案演变进行了详尽的研究,包括设计,主制造,NIL和随后的蚀刻图案转移。本研究展示了将NIL包含到我们的铸造厂成熟,cmos兼容的工艺模块中,以及实现技术感知建模和设计的模式演变表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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