Simulation and fabrication of AlGaAs/InGaAs/GaAs power PHEMT for MMIC applications at 35 GHz

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) Pub Date : 1999-09-15 DOI:10.1109/TENCON.1999.818620

Seong-Dae Lee, Jong Gon Heo, Seong Hwan Yang, J. Rhee

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Abstract

In this paper, AlGaAs/InGaAs/GaAs power PHEMT was simulated by ATLAS, and fabricated with T-gate process. Measured performance of the PHEMT agreed well with that of simulation. S/sub 21/ of 3.6 dB was measured at 35 GHz with f/sub T/ over 45 GHz, and f/sub max/ over 100 GHz. The PHEMT was also analyzed at 35 GHz for the variations in MAG according to gate and drain biases, and also for the changes in MAG and the output power against the unit gate width and the number of gate fingers.

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用于35 GHz MMIC应用的AlGaAs/InGaAs/GaAs功率PHEMT的仿真与制作

本文利用ATLAS对AlGaAs/InGaAs/GaAs功率PHEMT进行了仿真，并采用t栅工艺制备。PHEMT的实测性能与仿真结果吻合较好。S/sub 21/ 3.6 dB在35 GHz下测量，f/sub T/大于45 GHz, f/sub max/大于100 GHz。还分析了PHEMT在35 GHz下根据栅极和漏极偏置的MAG变化，以及MAG和输出功率对单位栅极宽度和栅极指数的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030)

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