Three-Level Error Control Coding for Dependable Solid-State Drives

H. Kaneko, T. Matsuzaka, E. Fujiwara
{"title":"Three-Level Error Control Coding for Dependable Solid-State Drives","authors":"H. Kaneko, T. Matsuzaka, E. Fujiwara","doi":"10.1109/PRDC.2008.17","DOIUrl":null,"url":null,"abstract":"Solid-state drive (SSD) has advantages over hard-disk drive (HDD) in terms of power consumption, random access time, and resilience to shock and vibration. Large capacity SSD usually requires high-density multi-level cell flash memory fabricated with deep-submicron process. High-density memory chips, however, are vulnerable to soft errors caused by, for example, fluctuations of gate voltage and charge level in the floating gate. This paper proposes a hierarchical three-level error control coding suitable for the dependable SSD. The proposed coding is capable of correcting multiple random bit errors, as well as of recovering from single chip failures. Evaluation shows that the proposed coding scheme provides strong error correction capability. For example, bit error rate (BER) of the SSD is reduced from 1.08 × 10-4 to 2.44 × 10-19 by using the proposed coding, that is, using two BCH codes with different error correction capabilities for the first and the second levels, and the simple parity-check code for the third level. Extra one spare memory chip in the SSD improves mean time to data loss (MTTDL) from 13 years to 34 years.","PeriodicalId":369064,"journal":{"name":"2008 14th IEEE Pacific Rim International Symposium on Dependable Computing","volume":"283 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 14th IEEE Pacific Rim International Symposium on Dependable Computing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PRDC.2008.17","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

Solid-state drive (SSD) has advantages over hard-disk drive (HDD) in terms of power consumption, random access time, and resilience to shock and vibration. Large capacity SSD usually requires high-density multi-level cell flash memory fabricated with deep-submicron process. High-density memory chips, however, are vulnerable to soft errors caused by, for example, fluctuations of gate voltage and charge level in the floating gate. This paper proposes a hierarchical three-level error control coding suitable for the dependable SSD. The proposed coding is capable of correcting multiple random bit errors, as well as of recovering from single chip failures. Evaluation shows that the proposed coding scheme provides strong error correction capability. For example, bit error rate (BER) of the SSD is reduced from 1.08 × 10-4 to 2.44 × 10-19 by using the proposed coding, that is, using two BCH codes with different error correction capabilities for the first and the second levels, and the simple parity-check code for the third level. Extra one spare memory chip in the SSD improves mean time to data loss (MTTDL) from 13 years to 34 years.
可靠固态硬盘的三级错误控制编码
固态硬盘(Solid-state drive, SSD)在功耗、随机访问时间、抗冲击和振动能力等方面都优于硬盘驱动器(hard-disk drive, HDD)。大容量SSD通常需要采用深亚微米工艺制造高密度多级单元快闪存储器。然而,高密度存储芯片容易受到软误差的影响,例如,浮栅中的栅极电压和电荷水平的波动。本文提出了一种适用于可靠固态硬盘的分层三层误差控制编码。所提出的编码能够纠正多个随机比特错误,以及从单芯片故障中恢复。结果表明,该编码方案具有较强的纠错能力。例如,SSD硬盘的误码率从1.08 × 10-4降低到2.44 × 10-19,即在第一级和第二级使用两种不同纠错能力的BCH码,在第三级使用简单的奇偶校验码。在SSD中增加一个备用内存芯片,将平均数据丢失时间(MTTDL)从13年提高到34年。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信