Design of High Speed Ternary Full Adder and Three-Input XOR Circuits Using CNTFETs

Sneh Lata Murotiya, Anu Gupta
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引用次数: 20

Abstract

This paper proposes a new high speed ternary full adder (TFA) cell for carbon nano tube field effect transistor (CNTFET) technology. The proposed design has a symmetric pull-up and pull-down networks along with a resistive voltage divider as its integral part, which is configured using transistors. The design takes inputs through a decoding unit and uses ternary nature of A & B but inherent binary nature of Cin leading to simplicity in design. The design demonstrates high driving power and robustness in terms of insusceptibility to voltage and temperature variations. The sum generation unit of proposed design is further modified for achieving an energy efficient three-input ternary XOR circuit which can be used as a basic cell in modern circuit design. Hspice simulation results with 32nm Stanford CNTFET model show 49% reduction in delay with 19% progress in power-delay product (PDP) for the proposed TFA and 43% reduction in delay with 48 % improvement in PDP for the proposed three input ternary XOR circuit in comparison with the CNTFET-based designs, recently published in the literature.
利用cntfet设计高速三元全加法器和三输入异或电路
提出了一种用于碳纳米管场效应晶体管(CNTFET)技术的新型高速三元全加法器(TFA)电池。提出的设计具有对称的上拉和下拉网络以及电阻分压器作为其组成部分,该分压器使用晶体管配置。该设计通过解码单元输入,并使用a和B的三元性质,但固有的二进制性质导致设计的简单性。该设计具有高驱动功率和鲁棒性,不受电压和温度变化的影响。为了实现高效节能的三输入三元异或电路,对所设计的和生成单元进行了进一步的改进,使其可以作为现代电路设计的基本单元。采用32nm Stanford CNTFET模型的Hspice仿真结果显示,与基于CNTFET的设计相比,所提出的TFA延迟降低49%,功率延迟积(PDP)提高19%,所提出的三输入三进制XOR电路延迟降低43%,PDP提高48%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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