Jin He, X. Xi, H. Wan, M. Chan, A. Niknejad, C. Hu
{"title":"Surface-potential-plus approach for next generation CMOS device modeling","authors":"Jin He, X. Xi, H. Wan, M. Chan, A. Niknejad, C. Hu","doi":"10.1109/IWJT.2004.1306870","DOIUrl":null,"url":null,"abstract":"This paper outlines the advanced Surface-Potential-Plus (SPP) approach for the next generation CMOS device modeling. The main object of this approach is to develop a continuous, completely symmetric and accurate advanced charge-based MOS transistor model from the basic device physics including various physics effects. A unified exact inversion charge relation valid for uniform and retrograde doping cases is first obtained. Various small dimensional effects are elucidated and integrated concisely into this model. Comparison with measured data is finally presented to validate the new model. Importantly, it was also extended to UTB and double-gate MOSFETs.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306870","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper outlines the advanced Surface-Potential-Plus (SPP) approach for the next generation CMOS device modeling. The main object of this approach is to develop a continuous, completely symmetric and accurate advanced charge-based MOS transistor model from the basic device physics including various physics effects. A unified exact inversion charge relation valid for uniform and retrograde doping cases is first obtained. Various small dimensional effects are elucidated and integrated concisely into this model. Comparison with measured data is finally presented to validate the new model. Importantly, it was also extended to UTB and double-gate MOSFETs.