Towards a Universal Model of Dielectric Breakdown

A. Padovani, P. L. Torraca, J. Strand, A. Shluger, Valerio Milo, L. Larcher
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引用次数: 3

Abstract

We present a microscopic breakdown (BD) model in which chemical bonds are weakened by carrier injection and trapping into pre-existing structural defects (precursors) and by the electric field. The model goes much beyond the existing ones by consistently explaining the role of both current (a weakness of the E model) and temperature (a weakness of the power-law model), along with the role of the electric field. It also explains the non-Arrhenius temperature dependence of BD. It suggests a new comprehensive physics-based framework (with tight connections to material properties) reconciling the many breakdown theories proposed so far (E, power-law, 1/E,…) within a more universal breakdown model.
迈向电介质击穿的通用模型
我们提出了一个微观击穿(BD)模型,其中化学键被载流子注入和捕获到预先存在的结构缺陷(前体)和电场削弱。该模型超越了现有的模型,一致地解释了电流(E模型的一个弱点)和温度(幂律模型的一个弱点)的作用,以及电场的作用。它还解释了BD的非阿伦尼乌斯温度依赖性。它提出了一个新的综合的基于物理的框架(与材料特性紧密联系),以协调迄今为止提出的许多击穿理论(E,幂律,1/E,…)在一个更普遍的击穿模型中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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