Effects of hot hole trapping in GaN HEMTs

Abstract

Hot hole trapping was mechanism was reported for GaN HEMTs from observations of electroluminescence changes and threshold voltage shifts. Passivation effect was studied through EL on the surface traps or surface states and proved to be effective in real-time monitoring of HEMT operation.Hole trapping leading to an increase in the drain to source current, and a decrease in the threshold voltage have also been shown.