Comparison of multiple cell upset response of BULK and SOI 130NM technologies in the terrestrial environment

Abstract

This paper presents alpha and neutron experimental results on 130 nm SRAMs processed in SOI and bulk technologies. Experiments were analyzed for multiple cells upset (MCU) occurrence. MCU percentages and rates were recorded as a function of different experimental parameters (supply voltage, test pattern, etc.). This work sheds light on the different mechanisms involved in MCU occurrence between SOI and bulk technologies.