3D simulation and measurements of free space characterization for silicon wafers at K-band

Abstract

This paper describes the 3D simulation and measurements of free space characterization for the complex permittivity of p-type and n-type doped silicon wafers at K-band. The component of this free space measurement system (FSMM) consists of Millitech series GOA Gaussian optics lens antennas, vector network analyzer (VNA) and a high performance workstation. The antennas were modeled and simulated using Computer Simulation Technology (CST) software. The thru, reflect and line (TRL) calibration technique were used to eliminate the effect of undesirable multiple reflections. The simulation and measurement results are presented where good agreements are observed.