Transient I-V-Characteristics of OLEDs with Deep Traps

S. Scheinert, G. Paasch, P. Nguyen, S. Berleb, W. Brutting
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引用次数: 4

Abstract

Measured current-voltage-characteristics of OLEDs show a large hysteresis for different sweep directions. To clarified this peculiarity we have carried out 2D simulations of transient current-voltage characteristics with a systematic variation of the relevant parameters to investigate this characteristics. It turns out that the transient behaviour can be explained by deep traps. Due to the high energy gap of organic materials deep traps can lie far from the bands. Further, the thermal velocity of the carriers is extremely low and consequently the time constant for trap recharging is very high. Therefore, a high delay time is necessary to measure the reverse steady-state current and to prevent the hysteresis effects.
深阱oled的瞬态i - v特性
实测的oled电流电压特性在不同的扫描方向上有较大的滞后。为了澄清这一特性,我们对瞬态电流-电压特性进行了二维模拟,并系统地改变了相关参数来研究这一特性。事实证明,瞬态行为可以用深阱来解释。由于有机物质的高能隙,深圈闭可以位于远离能带的地方。此外,载流子的热速度极低,因此陷阱再充电的时间常数非常高。因此,测量反向稳态电流和防止迟滞效应需要较高的延迟时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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