Two stage dual Gate MESFET Monolithic Gain Control Amplifier for Ka-Band

Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI:10.1109/MCS.1987.1114519

V. Sokolov, J. Geddes, A. Contolatis

引用次数: 0

Abstract

A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.

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用于ka波段的两级双门MESFET单片增益控制放大器

采用离子注入材料制备亚微米栅长双栅mesfet，研制了单片两级增益控制放大器。放大器在30 GHz时的增益为12 dB，增益控制范围超过30 dB。这种离子注入的单片集成电路很容易与其他相控阵接收器功能集成，如低噪声放大器和移相器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Microwave and Millimeter-Wave Monolithic Circuits

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