ESD protection for CMOS ASIC in noisy environments with high-current low-voltage triggering SCR devices

M. Ker
{"title":"ESD protection for CMOS ASIC in noisy environments with high-current low-voltage triggering SCR devices","authors":"M. Ker","doi":"10.1109/ASIC.1997.617022","DOIUrl":null,"url":null,"abstract":"A practical solution has been proposed to safely apply the LVTSCR (low-voltage-trigger SCR) device for output ESD (electrostatic discharge) protection in the advanced submicron CMOS ASIC's without being accidentally triggered on in the noisy operating environments. By increasing the trigger current of the LVTSCR device up to 200 mA, a noise margin greater than VDD+12V (VSS-12V) against the accidental triggering due to the overshooting (undershooting) noise pulses has been practically confirmed by the experimental results. Due to remaining a lower trigger voltage, this solution can still provide effective ESD protection for output transistors but only occupies a small layout area.","PeriodicalId":300310,"journal":{"name":"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASIC.1997.617022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

A practical solution has been proposed to safely apply the LVTSCR (low-voltage-trigger SCR) device for output ESD (electrostatic discharge) protection in the advanced submicron CMOS ASIC's without being accidentally triggered on in the noisy operating environments. By increasing the trigger current of the LVTSCR device up to 200 mA, a noise margin greater than VDD+12V (VSS-12V) against the accidental triggering due to the overshooting (undershooting) noise pulses has been practically confirmed by the experimental results. Due to remaining a lower trigger voltage, this solution can still provide effective ESD protection for output transistors but only occupies a small layout area.
具有大电流、低电压触发可控硅器件的CMOS ASIC在噪声环境中的ESD保护
提出了一种实用的解决方案,在先进的亚微米CMOS专用集成电路中安全地应用LVTSCR(低压触发SCR)器件进行输出ESD(静电放电)保护,而不会在嘈杂的工作环境中被意外触发。通过将LVTSCR器件的触发电流提高到200 mA,实验结果实际证实了对过冲(欠冲)噪声脉冲引起的意外触发具有大于VDD+12V (VSS-12V)的噪声裕度。由于保持较低的触发电压,该解决方案仍然可以为输出晶体管提供有效的ESD保护,但只占用很小的布局面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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