A 2nd derivative Gaussian UWB pulse transmitter design using a cross inductor

L. C. Moreira, C. A. Sassaki, W. Van Noije, S. Kofuji
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引用次数: 7

Abstract

This paper presents a UWB pulse transmitter design using MOSIS/IBM 0.35µm CMOS process. A 2nd order derivative Gaussian pulse is generated using a Phase Detector (PD), which consists of a D-Latch with an effective phase difference of 46ps, and at the output an extra derivative circuitry exists. It generates pulses of 100ps width. The Gaussian impulse achieves a very small pulse width of about 200ps, and amplitude of 120mVpp. The complete circuit occupies a very small area of 63.4×42.4µm2 without the PADs and inductor. The Sonnet tools were used to simulate and evaluate the performance of the novel cross inductor structure. In order to make a fair comparison, the new structure and conventional rectangular inductor were designed to get similar inductance value, and with the same segment width and spacing fixed at 10 µm. The result shows the feasibility to use the cross structure with an area of 160×140µm2, while the square planar inductor would occupy an area of 180×180µm2. Thus, the last one needs 45% more area than the cross inductor, so this cross inductor leads to an extra reduction in Silicon area, what is one of the main purposes of this work to get a small UWB transmitter. The compact shaper circuit and cross inductor has lead to the whole circuit area of only 0.0283mm2 (about 20% of other published works).
采用交叉电感的二阶导数高斯超宽带脉冲发射机设计
本文提出了一种采用MOSIS/IBM 0.35µm CMOS工艺的超宽带脉冲发射机设计。利用相位检测器(PD)产生二阶导数高斯脉冲,PD由一个有效相位差为46ps的d锁存器组成,在输出端存在一个额外的导数电路。它产生100ps宽的脉冲。高斯脉冲的脉冲宽度非常小,约为200ps,幅值为120mVpp。在没有pad和电感的情况下,整个电路占用的面积非常小,为63.4×42.4µm2。利用Sonnet工具对新型交叉电感结构的性能进行了仿真和评价。为了进行公平的比较,设计了与传统矩形电感相近的新结构电感,并将相同的片宽和间距固定在10µm。结果表明,采用面积为160×140µm2的交叉结构是可行的,而方形平面电感器将占用180×180µm2的面积。因此,最后一个需要比交叉电感多45%的面积,所以这个交叉电感导致硅面积的额外减少,这是这项工作的主要目的之一,以获得一个小型UWB发射机。紧凑的整形电路和交叉电感使整个电路面积仅为0.0283mm2(约为其他已发表作品的20%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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