A Double-Sided 650 V GaN Power Device Using Flexible Buffers with Low Parasitic Inductance

Siqi Liu, Longnv Li, Y. Mei
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Abstract

The heat dissipation design and low parasitic inductance are necessary for the packaging of GaN chips. However, due to the planarized structure of GaN chips and the complex finger electrodes on its surface, the GaN devices packaged in the form of double-sided cooling are rarely reported. For enhancing the heat dissipation performance of GaN devices, a new double-sided cooling method is proposed. In this work, we developed a composite buffer, namely copper-wire-spacer (CWS), with anisotropic electrical conductivity. The CWS could cover the GaN chip surface to connect the drain, source and gate pad while avoiding short circuit between them. The GaN chip was packaged between the CWS for pads interconnection and two direct-bond-copper (DBC) for heat dissipation. The proposed method was demonstrated by fabricating single-chip packages of a (650 V, 150 A) GaN HEMT. Silver sintering was used as attachment. The power loop inductance was measured as 3.83 nH. The RDS was measured as 11.2 mΩ.
一种采用低寄生电感柔性缓冲器的双面650v GaN电源器件
散热设计和低寄生电感是GaN芯片封装的必要条件。然而,由于GaN芯片的平面化结构和其表面复杂的手指电极,以双面冷却形式封装的GaN器件很少被报道。为了提高氮化镓器件的散热性能,提出了一种新的双面散热方法。在这项工作中,我们开发了一种具有各向异性电导率的复合缓冲器,即铜线间隔器(CWS)。CWS可以覆盖GaN芯片表面,连接漏极、源极和栅极衬垫,同时避免它们之间的短路。GaN芯片封装在CWS和两个直接键合铜(DBC)之间,用于焊盘互连和散热。通过制作(650 V, 150 a) GaN HEMT的单芯片封装验证了该方法。采用银烧结作为附着物。测得功率回路电感为3.83 nH。RDS为11.2 mΩ。
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