Ronghua Wang, Guowang Li, T. Fang, O. Laboutin, Yu Cao, W. Johnson, G. Snider, P. Fay, D. Jena, H. Xing
{"title":"Improvement of fT in InAl(Ga)N barrier HEMTs by plasma treatments","authors":"Ronghua Wang, Guowang Li, T. Fang, O. Laboutin, Yu Cao, W. Johnson, G. Snider, P. Fay, D. Jena, H. Xing","doi":"10.1109/DRC.2011.5994455","DOIUrl":null,"url":null,"abstract":"GaN-based high electron mobility transistors (HEMTs) have been developed for high-temperature, high-frequency and high-power applications. To improve the transistor speed, various techniques have been explored in addition to scaling down the gate length and top barrier thickness: ultrathin SiN passivation to reduce access resistance and parasitic capacitances [1]; re-grown ohmic contacts and self-alignment to minimize access resistances [2, 3]; O2 plasma treatment in the gate region prior to the metal deposition to suppress rf transconductance collapse [4]; and dielectric-free passivation (DFP) by a O2-containing plasma treatment in the access region to shorten the gate extension in InAlN HEMTs [5]. Here we report a comparative study on the impact of various plasma treatments in the access region (DFP) as well as under the gate for InAl(Ga)N barrier HEMTs, and propose a model for the observed fT improvement.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
GaN-based high electron mobility transistors (HEMTs) have been developed for high-temperature, high-frequency and high-power applications. To improve the transistor speed, various techniques have been explored in addition to scaling down the gate length and top barrier thickness: ultrathin SiN passivation to reduce access resistance and parasitic capacitances [1]; re-grown ohmic contacts and self-alignment to minimize access resistances [2, 3]; O2 plasma treatment in the gate region prior to the metal deposition to suppress rf transconductance collapse [4]; and dielectric-free passivation (DFP) by a O2-containing plasma treatment in the access region to shorten the gate extension in InAlN HEMTs [5]. Here we report a comparative study on the impact of various plasma treatments in the access region (DFP) as well as under the gate for InAl(Ga)N barrier HEMTs, and propose a model for the observed fT improvement.