Amplitude of RTS noise in MOSFETs

Abstract

Low frequency noise of NMOS and PMOS field effect transistors was measured in wide temperature range as a function of applied electric field intensity in longitudinal and perpendicular direction and the influence of sample geometry on 1/f noise and RTS noise was examined for various gate lengths. Relative amplitude of RTS noise given by number of carriers under the gate and its dependence on channel and gate bias was analyzed.