Simulation of CMOS compatible RF MEMS varactors

S. Lakshmi, Sudha Rao
{"title":"Simulation of CMOS compatible RF MEMS varactors","authors":"S. Lakshmi, Sudha Rao","doi":"10.1109/CCUBE.2013.6718576","DOIUrl":null,"url":null,"abstract":"This paper proposes the design, simulation and analysis of RF MEMS varactor for VCO applications for microwave frequencies. The varactors are parallel plate capacitors using electrostatic actuation for tuning. The designed varactors have been simulated using Coventorware and optimized in terms of dimensions to suit CMOS voltages. The varactors have been analyzed for the influence of plate thickness, folded suspension flexures thickness on pull-in voltage and tuning range.","PeriodicalId":194102,"journal":{"name":"2013 International conference on Circuits, Controls and Communications (CCUBE)","volume":"425 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International conference on Circuits, Controls and Communications (CCUBE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CCUBE.2013.6718576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper proposes the design, simulation and analysis of RF MEMS varactor for VCO applications for microwave frequencies. The varactors are parallel plate capacitors using electrostatic actuation for tuning. The designed varactors have been simulated using Coventorware and optimized in terms of dimensions to suit CMOS voltages. The varactors have been analyzed for the influence of plate thickness, folded suspension flexures thickness on pull-in voltage and tuning range.
CMOS兼容射频MEMS变容器的仿真
本文提出了用于微波频率压控振荡器的射频MEMS变容器的设计、仿真和分析。变容管是并联板电容器,采用静电驱动进行调谐。利用Coventorware对所设计的变容管进行了仿真,并对其尺寸进行了优化,以适应CMOS电压。分析了变容管板厚、折叠悬架挠曲厚度对拉入电压和调谐范围的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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