Displacement current and trapping mechanisms of electric charges in TiO/sub 2/-rutile

Abstract

The Scanning Electron Microscopy Mirror Effect (SEMME) and the Induced Current Measurement (ICM) have been used to characterize insulators. The application of these methods to a semiconducting material of wide band gap (TiO/sub 2/) reveals that the material presents a great leakage surface current and high anisotropy of dielectric properties. The goal of the present communication is to understand and study such a behaviour.