10kV Trench Gate IGBTs on 4H-SiC

Abstract

For the first time, 10kV trench IGBTs on 4H-SiC have been demonstrated. The devices exhibit an absolute resistance (V/J) of 290 m:o cm 2 ; specific resistance, (GV/GJ) of 175 m:o cm 2 and a –7.5V turn-on voltage at 25qC; a 13m:o cm 2 of specific resistance and a –4V of turn-on voltage at 150qC. A uniquely deep trench structure is incorporated to improve the device forward characteristics by a carrier injection enhancement (IE) effect.