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Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-12-30 DOI:10.37681/2181-1652-019-x-2021-6-2
Ш.Б. Утамурадова, Ж.Ж. Ҳамдамов, Д.А. Рахманов
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Abstract

Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si
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钬杂质对n-Si辐射缺陷形成过程的影响
钬杂质对n-Si辐射缺陷形成过程的影响
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS
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