A simulation model for embedding the transistor bias

J. Piper, J. Yuan
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Abstract

A simulation model for embedding the bias of a transistor is presented. The model exploits the simulators equilibrium point calculation to set the bias point of the transistor The model uses negative feedback to set the bias point according to what the designer desires. When the simulator goes into its main analyses the negative feedback is broken and embedded bias sources are added. This way it is possible to test an amplifier design before implementing the bias circuits. The model is technology independent can be used on any kind of transistor.
晶体管偏置嵌入的仿真模型
提出了一种嵌入晶体管偏置的仿真模型。该模型利用模拟器的平衡点计算来设定晶体管的偏置点,并采用负反馈的方法根据设计者的要求来设定偏置点。当模拟器进入其主要分析时,负反馈被打破,嵌入式偏置源被添加。这样就可以在实现偏置电路之前对放大器设计进行测试。该模型与技术无关,可用于任何类型的晶体管。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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