TRL Calibration Applied to the Measurement of Chip Transistor S-Parameters Up to 40 GHz

Abstract

The design of a Microstrip Test Fixture for TRL calibration, based on mobile, precisely positioned coax-to-microstrip transitions, is described. Experimental results for the measurement of GaAs FET and HEMT chips S-parameters in the 1-40 GHz frequency band are presented, and compared with the manufacturer's available data. Theoretical considerations and experimental results for the repeatability of transitions, based on a useful "error box" model, are also presented.