STT-MRAM for embedded memory applications from eNVM to last level cache

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8308734

L. Thomas, G. Jan, S. Le, S. Serrano-Guisan, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, J. Iwata-Harms, R. Tong, Sahil J. Patel, V. Sundar, D. Shen, Yi Yang, R. He, J. Haq, Z. Teng, V. Lam, Paul Liu, Yu-Jen Wang, T. Zhong, P. Wang

引用次数: 4

Abstract

Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is emerging as a leading candidate for a variety of embedded memory applications ranging from embedded NVM to working memory and last level cache. In this paper, we review recent breakthroughs that have brought perpendicular STT-MRAM to the cusp of mass production.

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用于从eNVM到最后一级缓存的嵌入式内存应用程序的STT-MRAM

自旋-传递-扭矩磁随机存取存储器(STT-MRAM)正在成为各种嵌入式存储器应用的主要候选器件，从嵌入式NVM到工作存储器和最后一级缓存。在本文中，我们回顾了最近的突破，使垂直STT-MRAM到大规模生产的尖端。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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