Self-aligned graphene-on-SiC and graphene-on-Si MOSFETs on 75 mm wafers

68th Device Research Conference Pub Date : 2010-06-21 DOI:10.1109/DRC.2010.5551910

J. Moon, D. Curtis, M. Hu, S. Bui, D. Wheeler, T. Marshall, H. Sharifi, D. Wong, D. Gaskill, P. Campbell, P. Asbeck, G. Jernigan, J. Tedesco, B. Vanmil, R. Myers-Ward, C. Eddy, X. Weng, J. Robinson, M. Fanton

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引用次数: 4

Abstract

Graphene has shown the highest carrier Hall mobility of >100,000 cm2/Vs with theoretical saturation velocity (Vsat) and source-injection velocity converging at ∼5E7 cm/sec [1] and ∼6E7 cm/sec, respectively. A potential combination of high current-carrying density, transconductance, and low access resistance could make graphene an attractive candidate for high-performance RF applications. So far, epitaxial graphene MOSFETs [2] in the early stages of development have revealed technical challenges: the current-voltage characteristics are quasi-linear with weak saturation behaviors and low transconductance per gate capacitance (<100 mS/mm). In addition, the Ion/Ioff ratio has been <10. While epitaxial graphene RF FETs with Fmax of 14 GHz per 2 µm gate length were demonstrated in a self-aligned top-gated layout with the highest ever on-state current density of 3 A/mm at Vds = 5 V, field-effect mobility was limited below 200 cm2/Vs. There are only a few reports of a graphene-on-Si platform with on-stage current <0.02 mA/mm. [3]

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自对准石墨烯- sic和石墨烯- si mosfet在75毫米晶圆

石墨烯的载流子霍尔迁移率最高，>100,000 cm2/Vs，理论饱和速度(Vsat)和源注入速度分别收敛于~ 5E7 cm/sec[1]和~ 6E7 cm/sec。高载流密度、跨导性和低接入电阻的潜在组合可能使石墨烯成为高性能射频应用的有吸引力的候选者。到目前为止，外延石墨烯mosfet[2]在发展的早期阶段已经暴露出技术挑战:电流-电压特性是准线性的，具有弱饱和行为和低跨导/栅极电容(<100 mS/mm)。此外，离子/ off比一直<10。虽然外延石墨烯射频场效应管的Fmax为14 GHz / 2µm栅极长度，在自校准顶门控布局下，在Vds = 5 V时具有最高的导通电流密度3 a /mm，但场效应迁移率被限制在200 cm2/Vs以下。目前仅有少数关于台上电流<0.02 mA/mm的硅基石墨烯平台的报道。[3]

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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68th Device Research Conference

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