S. Marsillac, K. Benchouk, C. E. Moctar, J. Bernède, J. Pouzet, A. Khellil, M. Jamali
{"title":"CuAlSe2 Thin Films Obtained by Chalcogenization","authors":"S. Marsillac, K. Benchouk, C. E. Moctar, J. Bernède, J. Pouzet, A. Khellil, M. Jamali","doi":"10.1051/JP3:1997249","DOIUrl":null,"url":null,"abstract":"Abstract. CuAlSe2 thinfilms havebeen synthesizedbychalcogenization ofthin Cu and Al layerssequentiallydepositedbyevaporation under vacuum. Itisshownthat CuAlSe2films are obtained with some Cu2-rise andSe phases present at thesurfaceThese phases are suppressedbyannealing under vacuum and chemical etching in a KCNsolution. Attheendoftheprocess, XRDspectrum demonstratesthat textured CuAlSe2 filmshave been obtainedwith preferential orientationofthe crystallitesalong the (l12) direction. Thegapthefilmsis2.7eV as expected. The films are nearlystoichiometric~ but theirsurface is quiterough The XPSspectra show that some Nadiffusesfromthe substrate towardthesurface during the annealing process. However, this Nais etched by KCN.1. Introduction TernaryI-III-VI2chalcopyrite semiconductorshavereceivedconsiderableattentioninrecentyearsbecauseoftheir applications in photovoltaic devices.Ifthe CuInSe2 isthe most extensively studied compound of family, some other ternary chalcopyrites haveattractedmuchattention","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal De Physique Iii","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JP3:1997249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Abstract. CuAlSe2 thinfilms havebeen synthesizedbychalcogenization ofthin Cu and Al layerssequentiallydepositedbyevaporation under vacuum. Itisshownthat CuAlSe2films are obtained with some Cu2-rise andSe phases present at thesurfaceThese phases are suppressedbyannealing under vacuum and chemical etching in a KCNsolution. Attheendoftheprocess, XRDspectrum demonstratesthat textured CuAlSe2 filmshave been obtainedwith preferential orientationofthe crystallitesalong the (l12) direction. Thegapthefilmsis2.7eV as expected. The films are nearlystoichiometric~ but theirsurface is quiterough The XPSspectra show that some Nadiffusesfromthe substrate towardthesurface during the annealing process. However, this Nais etched by KCN.1. Introduction TernaryI-III-VI2chalcopyrite semiconductorshavereceivedconsiderableattentioninrecentyearsbecauseoftheir applications in photovoltaic devices.Ifthe CuInSe2 isthe most extensively studied compound of family, some other ternary chalcopyrites haveattractedmuchattention