Thermal-driven 3D floorplanning using localized TSV placement

Puskar Budhathoki, Andreas Henschel, I. Elfadel
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引用次数: 11

Abstract

While 3D-ICs help to improve circuit performance and energy efficiency through the reduction of average wirelength and the increase in communication bandwidth of on-chip wiring, their thermal management remains one of the most challenging obstacles to their productization. Placement of thermal through-silicon-vias (TSVs) has been proposed to improve the vertical heat flow in the chip stack and this alleviate the negative impact of heat dissipation on chip performance and reliability. In this paper, we present a novel physical design flow that integrates thermal-driven 3D floorplanning with a novel algorithm for thermal TSVs placement that we call localized TSV placement. The essence of the algorithm is to analyze the layered thermal map of the chip stack and then insert thermal TSVs iteratively until the maximal on-chip temperature is below a pre-selected target. The algorithm is implemented within a full flow for thermal-driven 3D floorplanning. The implementation is tested using several standard benchmarks for physical design, and the experimental results show the suitability of our algorithm for significantly reducing maximum chip temperature at reasonable density levels for thermal TSVs (100° Kelvin reduction at 0.5% TSV density). The larger the die size, the more beneficial the localized placement of thermal TSV's.
热驱动3D地板规划使用本地化的TSV安置
虽然3d - ic通过减少片上布线的平均长度和增加通信带宽来帮助提高电路性能和能源效率,但其热管理仍然是其产品化的最具挑战性的障碍之一。热通硅通孔(tsv)的位置已被提出,以改善垂直热流在芯片堆栈,这减轻了散热对芯片性能和可靠性的负面影响。在本文中,我们提出了一种新的物理设计流程,将热驱动的3D地板规划与一种新的热TSV放置算法相结合,我们称之为本地化TSV放置。该算法的核心是分析芯片堆叠的分层热图,然后迭代插入热tsv,直到最大片上温度低于预先选定的目标。该算法在热驱动3D地板规划的全流程中实现。采用几种标准物理设计基准测试了该实现,实验结果表明,我们的算法适用于在合理的热TSV密度水平下显著降低最大芯片温度(在0.5% TSV密度下降低100°开尔文)。模具尺寸越大,热TSV的局部放置越有利。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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