{"title":"Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications","authors":"G. Bersuker, D. Gilmer, D. Veksler","doi":"10.1016/B978-0-08-102584-0.00002-4","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Non-Volatile Memory and Storage Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/B978-0-08-102584-0.00002-4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}