Advances in Non-Volatile Memory and Storage Technology最新文献

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Mechanism of memristive switching in OxRAM OxRAM中记忆开关的机制
Advances in Non-Volatile Memory and Storage Technology Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00005-X
S. Menzel, R. Waser
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引用次数: 5
RRAM/memristor for computing 用于计算的RRAM/忆阻器
Advances in Non-Volatile Memory and Storage Technology Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00015-2
Rivu Midya, Zhongrui Wang, Mingyi Rao, N. Upadhyay, J. Yang
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引用次数: 1
Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications 金属氧化物电阻随机存取存储器(RRAM)技术:材料和操作细节和分支
Advances in Non-Volatile Memory and Storage Technology Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00002-4
G. Bersuker, D. Gilmer, D. Veksler
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引用次数: 15
Emerging memory technologies for neuromorphic hardware 神经形态硬件的新兴记忆技术
Advances in Non-Volatile Memory and Storage Technology Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00016-4
E. Vianello, L. Perniola, B. D. Salvo
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引用次数: 2
Interface effects on memristive devices 忆阻器件的接口效应
Advances in Non-Volatile Memory and Storage Technology Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00006-1
S. Hoffmann‐Eifert, R. Dittmann
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引用次数: 3
Advances in nanowire PCM 纳米线PCM研究进展
Advances in Non-Volatile Memory and Storage Technology Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00013-9
M. Longo
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引用次数: 3
OxRAM technology development and performances OxRAM技术的发展和性能
Advances in Non-Volatile Memory and Storage Technology Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00001-2
L. Goux
{"title":"OxRAM technology development and performances","authors":"L. Goux","doi":"10.1016/B978-0-08-102584-0.00001-2","DOIUrl":"https://doi.org/10.1016/B978-0-08-102584-0.00001-2","url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122583505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Selector devices for x-point memory x点存储器的选择器设备
Advances in Non-Volatile Memory and Storage Technology Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00011-5
Jeonghwan Song, Y. Koo, Jaehyuk Park, Seokjae Lim, H. Hwang
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引用次数: 2
Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) 自旋轨道转矩磁阻随机存取存储器
Advances in Non-Volatile Memory and Storage Technology Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00007-3
C. Bi, N. Sato, Shan X. Wang
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引用次数: 3
Neuromorphic computing with resistive switching memory devices 使用电阻开关存储器的神经形态计算
Advances in Non-Volatile Memory and Storage Technology Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00017-6
D. Ielmini, S. Ambrogio
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引用次数: 5
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