{"title":"Mechanism of memristive switching in OxRAM","authors":"S. Menzel, R. Waser","doi":"10.1016/B978-0-08-102584-0.00005-X","DOIUrl":"https://doi.org/10.1016/B978-0-08-102584-0.00005-X","url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123210071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rivu Midya, Zhongrui Wang, Mingyi Rao, N. Upadhyay, J. Yang
{"title":"RRAM/memristor for computing","authors":"Rivu Midya, Zhongrui Wang, Mingyi Rao, N. Upadhyay, J. Yang","doi":"10.1016/B978-0-08-102584-0.00015-2","DOIUrl":"https://doi.org/10.1016/B978-0-08-102584-0.00015-2","url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125386589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications","authors":"G. Bersuker, D. Gilmer, D. Veksler","doi":"10.1016/B978-0-08-102584-0.00002-4","DOIUrl":"https://doi.org/10.1016/B978-0-08-102584-0.00002-4","url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122760895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Emerging memory technologies for neuromorphic hardware","authors":"E. Vianello, L. Perniola, B. D. Salvo","doi":"10.1016/B978-0-08-102584-0.00016-4","DOIUrl":"https://doi.org/10.1016/B978-0-08-102584-0.00016-4","url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115795765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Interface effects on memristive devices","authors":"S. Hoffmann‐Eifert, R. Dittmann","doi":"10.1016/B978-0-08-102584-0.00006-1","DOIUrl":"https://doi.org/10.1016/B978-0-08-102584-0.00006-1","url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125547093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Advances in nanowire PCM","authors":"M. Longo","doi":"10.1016/B978-0-08-102584-0.00013-9","DOIUrl":"https://doi.org/10.1016/B978-0-08-102584-0.00013-9","url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131101304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"OxRAM technology development and performances","authors":"L. Goux","doi":"10.1016/B978-0-08-102584-0.00001-2","DOIUrl":"https://doi.org/10.1016/B978-0-08-102584-0.00001-2","url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122583505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jeonghwan Song, Y. Koo, Jaehyuk Park, Seokjae Lim, H. Hwang
{"title":"Selector devices for x-point memory","authors":"Jeonghwan Song, Y. Koo, Jaehyuk Park, Seokjae Lim, H. Hwang","doi":"10.1016/B978-0-08-102584-0.00011-5","DOIUrl":"https://doi.org/10.1016/B978-0-08-102584-0.00011-5","url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126639441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Neuromorphic computing with resistive switching memory devices","authors":"D. Ielmini, S. Ambrogio","doi":"10.1016/B978-0-08-102584-0.00017-6","DOIUrl":"https://doi.org/10.1016/B978-0-08-102584-0.00017-6","url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127673584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}