Modelling of Thin Film Transistors for Circuit Simulation

Abstract

We review recent physics-based, compact models for thin film transistors (TFTs), including amorphous (a-Si), polysilicon (poly-Si), nanocrystalline silicon (nc-Si), and organic TFTs. The models accurately reproduce the DC characteristics for different geometries. We also present a universal TFT model paradigm, which allows to obtain a suitable estimation of TFT characteristics using only eight parameters, which are very easy to extract. This universal TFT model is used for the first iteration step in complete models adapted to each type of device.