Comparative analysis of High-K gate stack based Conventional & Junctionless FinFET

Abstract

In this paper, the effect of high-K gate dielectric on the analog/RF performance of conventional trigate FinFET and junctionless trigate FinFET has been compared. It is observed that the deterioration in analog/RF performance is more pronounced in conventional trigate FinFET device as compared to junctionless trigate FinFET device when high-K gate dielectric is used instead of SiO2. The deterioration in intrinsic dc gain $(\Delta \text{AV}=\text{AV}_{(\mathrm{K}=3.9)}-\text{Av}_{(\mathrm{K}=40)})$, cut-off frequency $(\Delta\mathrm{f}_{\mathrm{T}}=\mathrm{f}_{\mathrm{T}(\mathrm{K}=3.9)}- \mathrm{f}_{\mathrm{T}(\mathrm{K}=40)})$, and maximum oscillation frequency $(\Delta \mathrm{f}_{\text{MAX}}=\mathrm{f}_{\text{MAX}(\mathrm{K}=3.9)}- \mathrm{f}_{\text{MAX}(\mathrm{K}=40)})$ is 10.7 dB, 5.5 GHz & 11 GHz respectively in case of conventional trigate FinFET and 6 dB, 3.9 GHz & 30 GHz respectively in case of junctionless trigate FinFET. Thus, use of high-K gate dielectric is more beneficial in junctionless trigate FinFET devices for better analog/RF performance.