{"title":"13.5 MHz class-S modulator for an EER transmitter","authors":"V. Saari, P. Juurakko, J. Ryyndnen, K. Halonen","doi":"10.1109/NORCHP.2004.1423871","DOIUrl":null,"url":null,"abstract":"An integrated 13.5MHz class-S modulator for an EER transmitter is described. The modulator uses 3.3 V supply voltage and was fabricated using 0.18 μm CMOS technology. The measured output power was 22.8 dBm for a 10 MHz rectangle pulse input signal with 50% Ye duty cycle. The chip area is 1.6 mm2.","PeriodicalId":208182,"journal":{"name":"Proceedings Norchip Conference, 2004.","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Norchip Conference, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2004.1423871","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
An integrated 13.5MHz class-S modulator for an EER transmitter is described. The modulator uses 3.3 V supply voltage and was fabricated using 0.18 μm CMOS technology. The measured output power was 22.8 dBm for a 10 MHz rectangle pulse input signal with 50% Ye duty cycle. The chip area is 1.6 mm2.