Numerical modeling and simulation of stable nanowire CdS-CdTe solar cells

Abstract

Nanowire CdS-CdTe solar cells have been fabricated and their reliability was measured in annealing furnace at 120 °C ambient air for 120 hours. The Numerical simulation models were established to simulate measured J-V characteristics of the nanowire solar cells after fabrication and after the 120 hour thermal annealing. Simulation models demonstrate that donor trap concentration in the CdTe layer is increased from 7.2∗1014/cm3 to 7.6∗1014/cm3 after 120 hour annealing. However, acceptor traps in the CdS nanowires maintain identical concentration after 120 hour annealing. Simulation models indicate that donor traps in the CdTe layer mainly contribute to efficiency loss of the nanowire solar cells. Low defect feature of the CdS nanowires plays a role in device reliability.