Numerical modeling and simulation of stable nanowire CdS-CdTe solar cells

Hongmei Dang, E. Ososanya, Nian Zhang, Vijay Singh
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引用次数: 1

Abstract

Nanowire CdS-CdTe solar cells have been fabricated and their reliability was measured in annealing furnace at 120 °C ambient air for 120 hours. The Numerical simulation models were established to simulate measured J-V characteristics of the nanowire solar cells after fabrication and after the 120 hour thermal annealing. Simulation models demonstrate that donor trap concentration in the CdTe layer is increased from 7.2∗1014/cm3 to 7.6∗1014/cm3 after 120 hour annealing. However, acceptor traps in the CdS nanowires maintain identical concentration after 120 hour annealing. Simulation models indicate that donor traps in the CdTe layer mainly contribute to efficiency loss of the nanowire solar cells. Low defect feature of the CdS nanowires plays a role in device reliability.
稳定纳米线CdS-CdTe太阳能电池的数值模拟与仿真
制备了纳米线CdS-CdTe太阳能电池,并在120℃环境空气中进行了120小时的可靠性测试。建立数值模拟模型,模拟纳米线太阳能电池制备后和热处理120 h后的J-V特性。模拟模型表明,经过120小时退火后,CdTe层中的供体陷阱浓度从7.2∗1014/cm3增加到7.6∗1014/cm3。然而,CdS纳米线中的受体陷阱在120小时退火后仍保持相同的浓度。仿真模型表明,CdTe层中的供体陷阱是导致纳米线太阳能电池效率损失的主要原因。CdS纳米线的低缺陷特性对器件的可靠性起着重要的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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