Nanoelectronics: From silicon to graphene

Abstract

In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon seems to be a great alternative to build high performance electronic devices. Carbon nanotube field-effect transistors can be used as active device in integrated circuits, as memory cell in numerous applications. More recently, graphene-based transistors are emerging as another potential candidate to extend and eventually replace the traditional planar MOSFET.