Light-Illumination-Induced Degradation and Its Long-Term Recovery in Indium-Tin-Zinc Oxide Thin-Film Transistors

Abstract

Light-illumination-induced degradation and its long-term recovery in indium-tin-zinc oxide (ITZO) thin-film transistors (TFTs) are investigated. Negative threshold voltage shift and subthreshold degradation are observed under light of 546.1 nm with 14.92 mW/cm2. Short-term recovery and long-term recovery of ITZO TFT exhibit two different characteristics. Incorporated with TCAD simulations, the degradation mechanism and recovery mechanism are tentatively discussed.