Molecular layer epitaxy for future devices

Abstract

Molecular layer epitaxies (MLE) of GaAs related compounds and Si with SiO/sub 2/ deposition has been developed to realize THz operating devices. At a lower process temperature than for conventional growth methods, device quality epitaxial layers were achieved by molecular layer epitaxy, In GaAs MLE, 100 /spl Aring/ scale static induction transistors are fabricated by MLE operating in a mixed ballistic-tunneling mode or in the pure tunneling mode. For device applications basic research in the fields of surface science and material science are studied.