Simulation Based Feasibility Study of Wireless RF Interconnects for 3D ICs

A. More, B. Taskin
{"title":"Simulation Based Feasibility Study of Wireless RF Interconnects for 3D ICs","authors":"A. More, B. Taskin","doi":"10.1109/ISVLSI.2010.33","DOIUrl":null,"url":null,"abstract":"A feasibility study of inter-tier wireless interconnects to be used in conjunction with through silicon vias (TSVs) for global communication in 3D ICs is presented. The feasibility is shown by performing a full wave electromagnetic analysis of on-chip communicating antennas in a 3D IC, modeled according to a fully-depleted silicon on insulator (FDSOI) 3D circuit integration technology. It is shown that the selected transmitting and receiving antennas provide a strong signal coupling at the adjacent (-6.67 dB) and the non-adjacent (-6.93 dB) tiers of the 3D IC at a radiation frequency of 10GHz. In addition to permitting non-adjacent tier communication, wireless interconnects are superior to TSVs in permitting non-vertically aligned connections between IC tiers.","PeriodicalId":187530,"journal":{"name":"2010 IEEE Computer Society Annual Symposium on VLSI","volume":"228 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Computer Society Annual Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2010.33","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

A feasibility study of inter-tier wireless interconnects to be used in conjunction with through silicon vias (TSVs) for global communication in 3D ICs is presented. The feasibility is shown by performing a full wave electromagnetic analysis of on-chip communicating antennas in a 3D IC, modeled according to a fully-depleted silicon on insulator (FDSOI) 3D circuit integration technology. It is shown that the selected transmitting and receiving antennas provide a strong signal coupling at the adjacent (-6.67 dB) and the non-adjacent (-6.93 dB) tiers of the 3D IC at a radiation frequency of 10GHz. In addition to permitting non-adjacent tier communication, wireless interconnects are superior to TSVs in permitting non-vertically aligned connections between IC tiers.
基于仿真的3D集成电路无线射频互连可行性研究
本文提出了一种与硅通孔(tsv)一起用于3D集成电路全球通信的层间无线互连的可行性研究。根据全耗尽绝缘体上硅(FDSOI)三维电路集成技术建模,通过对3D集成电路中的片上通信天线进行全波电磁分析,证明了该方法的可行性。结果表明,在10GHz辐射频率下,所选择的发射和接收天线在三维集成电路的相邻层(-6.67 dB)和非相邻层(-6.93 dB)提供了较强的信号耦合。除了允许非相邻层通信之外,无线互连在允许IC层之间的非垂直对齐连接方面优于tsv。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信