TCAD challenges and some Fraunhofer solutions

Abstract

In order to meet its industrial target to reduce the development time and costs for new semiconductor technologies, devices and circuits, TCAD must meet various challenges which are outlined in the ITRS. After a short outline of these challenges, related results obtained at Fraunhofer for the simulation of lithography and other topography steps, dopant diffusion/activation, device architectures and impact of process variations are summarized.