Characterization on Surface Morphology of GaN Layer Deposited on 2D MoS2 Developed by CVD System

Abstract

: A few layers of GaN was deposited epitaxial on the MoS 2 layers by PA-MBE technique. A smooth surface with mixed like-flakes of MoS 2 is provided by the development of CVD system. It is grown on the c-sapphire substrate with a few layers. Further, surface morphology both of MoS 2 substrate and GaN layer was investigated in detail by the AFM and FE-SEM characterization. The results demonstrated that the surface morphology of the constructing GaN layer was smoother than MoS 2 layer. The surface texture was obtained throughout the decreasing of area roughness up to 1.44 nm and root mean square (RMS) of 2.40 nm. However, thin GaN layers covering the MoS 2 surface was in the less content of atomic with a weight Ga element. It takes longer growth time and more flux to obtain a flat morphological surface with high smoothness.