David L. Sloan, Gordon Hall, C. Backhouse, D. Elliott
{"title":"300 V integrated charge pump for lab on chip applications","authors":"David L. Sloan, Gordon Hall, C. Backhouse, D. Elliott","doi":"10.1109/NANO.2014.6968182","DOIUrl":null,"url":null,"abstract":"In this paper we demonstrate a fully integrated 300 V low current charge pump design which has been manufactured using Teledyne DALSA's triple well 800 nm high voltage IC process. This charge pump is powered by a 5 V supply, drawing less than 2% of the USB 2.0 maximum current, thus enabling future low-cost compact point-of-care diagnostic devices that would be connected to and powered off a laptop or smart phone. We have demonstrated this device to be capable of producing 300 V while sourcing up to 10 μA.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"14th IEEE International Conference on Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2014.6968182","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper we demonstrate a fully integrated 300 V low current charge pump design which has been manufactured using Teledyne DALSA's triple well 800 nm high voltage IC process. This charge pump is powered by a 5 V supply, drawing less than 2% of the USB 2.0 maximum current, thus enabling future low-cost compact point-of-care diagnostic devices that would be connected to and powered off a laptop or smart phone. We have demonstrated this device to be capable of producing 300 V while sourcing up to 10 μA.