Robustness improvement of short-circuit capability by SiC trench-etched double-diffused MOS (TED MOS)

Abstract

A 3.3-kV SiC trench-etched double-diffused MOS (TED MOS) is designed and fabricated for robust short-circuit (SC) capability. Because of its low-Vover (Vg — Vth) operation, the TED MOS successfully reduces the drain current in saturation region to less than 700 A/cm2 at SC tests. The low drain current in a saturation region enhances the SC capability of the TED MOS. As a result, the SC endurance time of the TED MOS is 2.8 times longer than that of the conventional SiC DMOS.