Irradiation Effects of 1 MeV Electron on Monolayer MoS2 Field Effect Transistors

Abstract

The effect of irradiation on monolayer MoS2 FET (field effect transistor) with 1 MeV electron beams was investigated. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) was measured before and after irradiation. The results show that electron irradiation produces a strong desulfurization effect. The electrical characteristics of the device were measured with fluence condition of 1.0×1012 and 3.0×1012cm-2. The channel leakage increases after irradiation while transfer and output current decrease. This phenomenon can be attributed to the combination of the states at the SiO2/MoS2 interfaces and Coulomb scattering. Our study will enhance the understanding of the influence of 1 MeV electron on MoS2-based nanoelectronics devices.