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High purity AlGaAs grown by molecular beam epitaxy

Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289) Pub Date : 1999-09-21 DOI:10.1109/MIAME.1999.827849
K. Zhuravlev, A. Toropov, T. Shamirzaev, A. Bakarov, Yu.N. Rakov, Yu.B. Myakishev
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引用次数: 2

Abstract

We report the growth and photoluminescence of very high quality Al/sub x/Ga/sub 1-x/As layers grown by molecular beam epitaxy over the 0
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分子束外延生长高纯度AlGaAs
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Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)
Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)
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