The study Of an P+HgCdTe/N-HgCdTe/CdZnTe homojunction photodetector for LWIR free space optical communication system

Abstract

The current demand growth of new components capable of operating at high power, high frequency, high temperatures and convergence towards miniaturization has lead to the development of new fields of nanotechnology based on II-VI semiconductor. Interest in nanostructures based on II-VI semiconductor narrow gap containing mercury (such as superlattices HgTe / CdTe) was due to their advantages over alloys with cadmium telluride Mercury (MCT: HgCdTe). The ternary alloy Hg1−xCdxTe is a semiconductor band-gap direct, In our work we are interested in the ternary compound Hg07Cd03Te. The results obtained are very satisfactory; they are compared with experimental results, and are in good agreement. These results are very promising and open new perspectives for the realization of solar cells and applications in the field of sensors. In this paper an analytical modeling of p+-HgCdTe/n-HgCdTe/CdZnTe, homojunction photodetector for long wavelength free space optical communication has been reported. The results obtained on the basis of analytical model have been compared and contrasted with the simulated results using ATLASTM. The photodetector has been studied in respect of energy band diagram, electric field profile, doping profile, dark current, resistance area-product, quantum efficiency, spectral response, responsivity and detectivity by analytical method using closed form equations and also been simulated by using device simulation software ATLASTM from SILVACO international.